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Toshiba Semiconductor and Storage RN49A1(TE85L,F)

Part No.:
RN49A1(TE85L,F)
Manufacturer:
Toshiba Semiconductor and Storage
Category:
Bipolar Transistor Arrays, Pre-Biased
Package:
6-TSSOP, SC-88, SOT-363
Datasheet:
BomKey ElectronicsRN49A1(TE85L,F).pdf
Description:
PNP + NPN BRT Q1BSR=2.2KOHM Q1BE
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RN49A1(TE85L,F) Specifications

Toshiba Semiconductor and Storage RN49A1(TE85L,F) technical specifications, attributes, parameters and parts with similar specifications to Toshiba Semiconductor and Storage RN49A1(TE85L,F).
  • Specifications
  • FAQ
Attributes
Property Value
Manufacturer
Toshiba Semiconductor and Storage
Series:
-
Package/Case:
6-TSSOP, SC-88, SOT-363
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Transistor Type:
1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max):
100mA
Voltage - Collector Emitter Breakdown (Max):
50V
Resistor - Base (R1):
2.2kOhms, 22kOhms
Resistor - Emitter Base (R2):
47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:
80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic:
300mV @ 250µA, 5mA
Current - Collector Cutoff (Max):
500nA
Frequency - Transition:
200MHz, 250MHz
Power - Max:
200mW
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
US6
Category:
Bipolar Transistor Arrays, Pre-Biased
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RN49A1(TE85L,F) Comparison

Images RN49A1(T5L,F,T) RN49A1(TE85L,F) RN49A1FE(TE85L,F)
Part No. RN49A1(T5L,F,T) RN49A1(TE85L,F) RN49A1FE(TE85L,F)
Manufacturer Toshiba Semiconductor and Storage Toshiba Semiconductor and Storage Toshiba Semiconductor and Storage
Series - - -
Package/Case 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 SOT-563, SOT-666
Packaging Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR)
Product Status Obsolete Obsolete Obsolete
Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual) 1 NPN, 1 PNP - Pre-Biased (Dual) 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max) 100mA 100mA 100mA
Voltage - Collector Emitter Breakdown (Max) 50V 50V 50V
Resistor - Base (R1) 2.2kOhms 2.2kOhms, 22kOhms 2.2kOhms, 22kOhms
Resistor - Emitter Base (R2) 47kOhms 47kOhms 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA, 5V 80 @ 10mA, 5V 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA 300mV @ 250µA, 5mA 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max) 100nA (ICBO) 500nA 500nA
Frequency - Transition 200MHz 200MHz, 250MHz 200MHz, 250MHz
Power - Max 200mW 200mW 100mW
Grade - - -
Qualification - - -
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package US6 US6 ES6

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