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Texas Instruments CSD87502Q2T

Part No.:
CSD87502Q2T
Manufacturer:
Texas Instruments
Category:
FET, MOSFET Arrays
Package:
6-WDFN Exposed Pad
Datasheet:
BomKey ElectronicsCSD87502Q2T.pdf
Description:
MOSFET 2N-CH 30V 5A 6WSON
Payment:
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CSD87502Q2T Specifications

Texas Instruments CSD87502Q2T technical specifications, attributes, parameters and parts with similar specifications to Texas Instruments CSD87502Q2T.
  • Specifications
  • FAQ
Attributes
Property Value
Manufacturer
Texas Instruments
Series:
NexFET™
Package/Case:
6-WDFN Exposed Pad
Packaging:
Tape & Reel (TR)
Product Status:
Active
Technology:
MOSFET (Metal Oxide)
Configuration:
2 N-Channel (Dual)
FET Feature:
Logic Level Gate, 5V Drive
Drain to Source Voltage (Vdss):
30V
Current - Continuous Drain (Id) @ 25°C:
5A
Rds On (Max) @ Id, Vgs:
32.4mOhm @ 4A, 10V
Vgs(th) (Max) @ Id:
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
6nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:
353pF @ 15V
Power - Max:
2.3W
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
6-WSON (2x2)
Category:
FET, MOSFET Arrays
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Images CSD87502Q2T
Part No. CSD87502Q2T
Manufacturer Texas Instruments
Series NexFET™
Package/Case 6-WDFN Exposed Pad
Packaging Tape & Reel (TR)
Product Status Active
Technology MOSFET (Metal Oxide)
Configuration 2 N-Channel (Dual)
FET Feature Logic Level Gate, 5V Drive
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 5A
Rds On (Max) @ Id, Vgs 32.4mOhm @ 4A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 6nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 353pF @ 15V
Power - Max 2.3W
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package 6-WSON (2x2)

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