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    STMicroelectronics STU13N60M2

    Part No.:
    STU13N60M2
    Manufacturer:
    STMicroelectronics
    Category:
    FETs, MOSFETs
    Package:
    TO-251-3 Short Leads, IPAK, TO-251AA
    Datasheet:
    BomKey ElectronicsSTU13N60M2.pdf
    Description:
    MOSFET N-CH 600V 11A IPAK
    Payment:
    Payment
    Shipping:
    Shipping

    STU13N60M2 Specifications

    STMicroelectronics STU13N60M2 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STU13N60M2.
    • Specifications
    • FAQ
    Attributes
    Property Value
    Manufacturer
    STMicroelectronics
    Series:
    MDmesh™ II Plus
    Package/Case:
    TO-251-3 Short Leads, IPAK, TO-251AA
    Packaging:
    Tube
    Product Status:
    Active
    FET Type:
    N-Channel
    Technology:
    MOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss):
    600 V
    Current - Continuous Drain (Id) @ 25°C:
    11A (Tc)
    Drive Voltage (Max Rds On, Min Rds On):
    10V
    Rds On (Max) @ Id, Vgs:
    380mOhm @ 5.5A, 10V
    Vgs(th) (Max) @ Id:
    4V @ 250µA
    Gate Charge (Qg) (Max) @ Vgs:
    17 nC @ 10 V
    Vgs (Max):
    ±25V
    Input Capacitance (Ciss) (Max) @ Vds:
    580 pF @ 100 V
    FET Feature:
    -
    Power Dissipation (Max):
    110W (Tc)
    Operating Temperature:
    -55°C ~ 150°C (TJ)
    Grade:
    -
    Qualification:
    -
    Mounting Type:
    Through Hole
    Supplier Device Package:
    TO-251 (IPAK)
    Category:
    FETs, MOSFETs
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    STU13N60M2 Comparison

    Images STU13N60M2
    Part No. STU13N60M2
    Manufacturer STMicroelectronics
    Series MDmesh™ II Plus
    Package/Case TO-251-3 Short Leads, IPAK, TO-251AA
    Packaging Tube
    Product Status Active
    FET Type N-Channel
    Technology MOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss) 600 V
    Current - Continuous Drain (Id) @ 25°C 11A (Tc)
    Drive Voltage (Max Rds On, Min Rds On) 10V
    Rds On (Max) @ Id, Vgs 380mOhm @ 5.5A, 10V
    Vgs(th) (Max) @ Id 4V @ 250µA
    Gate Charge (Qg) (Max) @ Vgs 17 nC @ 10 V
    Vgs (Max) ±25V
    Input Capacitance (Ciss) (Max) @ Vds 580 pF @ 100 V
    FET Feature -
    Power Dissipation (Max) 110W (Tc)
    Operating Temperature -55°C ~ 150°C (TJ)
    Grade -
    Qualification -
    Mounting Type Through Hole
    Supplier Device Package TO-251 (IPAK)

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