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    Toshiba Semiconductor and Storage TJ20A10M3(STA4,Q

    Part No.:
    TJ20A10M3(STA4,Q
    Manufacturer:
    Toshiba Semiconductor and Storage
    Category:
    FETs, MOSFETs
    Package:
    TO-220-3 Full Pack
    Datasheet:
    BomKey ElectronicsTJ20A10M3(STA4,Q.pdf
    Description:
    TJ20A10M3(STA4,Q
    Payment:
    Payment
    Shipping:
    Shipping

    Product details

    • Specifications
    • FAQ
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    Attributes
    Property Value
    Manufacturer
    Toshiba Semiconductor and Storage
    Series:
    U-MOSVI
    Package/Case:
    TO-220-3 Full Pack
    Packaging:
    Tube
    Product Status:
    Active
    FET Type:
    P-Channel
    Technology:
    MOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss):
    100 V
    Current - Continuous Drain (Id) @ 25°C:
    20A (Ta)
    Drive Voltage (Max Rds On, Min Rds On):
    10V
    Rds On (Max) @ Id, Vgs:
    90mOhm @ 10A, 10V
    Vgs(th) (Max) @ Id:
    4V @ 1mA
    Gate Charge (Qg) (Max) @ Vgs:
    120 nC @ 10 V
    Vgs (Max):
    ±20V
    Input Capacitance (Ciss) (Max) @ Vds:
    5500 pF @ 10 V
    FET Feature:
    -
    Power Dissipation (Max):
    35W (Tc)
    Operating Temperature:
    150°C
    Grade:
    -
    Qualification:
    -
    Mounting Type:
    Through Hole
    Supplier Device Package:
    TO-220SIS
    Category:
    FETs, MOSFETs
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    1. How to order TJ20A10M3(STA4,Q on BomKey Electronics?

    Currently,, BomKey Electronics only provide peer-to-peer order processing. While you submit the RFQ, our professional agent will contact you with the competitive prices in the global market, and our agent will prompt you to finish the order if you accept our offers.

    2. How does BomKey Electronics guarantee that TJ20A10M3(STA4,Q is from the original manufacturer or authorized agents?

    We have a professional and experienced quality control team to strictly verify and test the TJ20A10M3(STA4,Q. All suppliers must pass our qualification reviews before they can publish their products including TJ20A10M3(STA4,Q on BomKey Electronics; we pay more attention to the channels and quality of TJ20A10M3(STA4,Q products than any other customer. We strictly implement supplier audits, so you can purchase with confidence. .

    3. Are the TJ20A10M3(STA4,Q price and inventory displayed accurate?

    The price and inventory of TJ20A10M3(STA4,Q fluctuates frequently and cannot be updated in time, it will be updated periodically within 24 hours. And, our quotation usually expires after 5 days.

    4. What forms of payment are accepted?

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    Warm Tips: It may take up to 24 hours for the carriers to display tracking information. Usually, express delivery takes 3-5 days, and registered mail takes 25-60 days.

    6. What is the process for return or replacement of TJ20A10M3(STA4,Q?

    All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the TJ20A10M3(STA4,Q we delivered, we will accept the replacement or return of the TJ20A10M3(STA4,Q only when all of the below conditions are fulfilled:

    (1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

    (2)We are informed of the defect described above within 90 days after the delivery of TJ20A10M3(STA4,Q.

    (3)The PartNo is unused and only in the original unpacked packaging.

    Two processes to return the products:

    (1)Inform us within 90 days

    (2)Obtain Requesting Return Authorizations

    7.How to contact us to get technical supports, such as TJ20A10M3(STA4,Q pin diagram, TJ20A10M3(STA4,Q datasheet?

    If you need any after-sales service, please do not hesitate to contact us.

    Images TJ20A10M3(STA4,Q
    Part No. TJ20A10M3(STA4,Q
    Manufacturer Toshiba Semiconductor and Storage
    Series U-MOSVI
    Package/Case TO-220-3 Full Pack
    Packaging Tube
    Product Status Active
    FET Type P-Channel
    Technology MOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss) 100 V
    Current - Continuous Drain (Id) @ 25°C 20A (Ta)
    Drive Voltage (Max Rds On, Min Rds On) 10V
    Rds On (Max) @ Id, Vgs 90mOhm @ 10A, 10V
    Vgs(th) (Max) @ Id 4V @ 1mA
    Gate Charge (Qg) (Max) @ Vgs 120 nC @ 10 V
    Vgs (Max) ±20V
    Input Capacitance (Ciss) (Max) @ Vds 5500 pF @ 10 V
    FET Feature -
    Power Dissipation (Max) 35W (Tc)
    Operating Temperature 150°C
    Grade -
    Qualification -
    Mounting Type Through Hole
    Supplier Device Package TO-220SIS

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