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    Texas Instruments CSD86356Q5D

    Part No.:
    CSD86356Q5D
    Manufacturer:
    Texas Instruments
    Category:
    FET, MOSFET Arrays
    Package:
    8-PowerTDFN
    Datasheet:
    BomKey ElectronicsCSD86356Q5D.pdf
    Description:
    MOSFET 2N-CH 25V 40A 8VSON-CLIP
    Payment:
    Payment
    Shipping:
    Shipping

    Product details

    • Specifications
    • FAQ
    • Comparison
    • Related
    Attributes
    Property Value
    Manufacturer
    Texas Instruments
    Series:
    NexFET™
    Package/Case:
    8-PowerTDFN
    Packaging:
    Tape & Reel (TR)
    Product Status:
    Active
    Technology:
    MOSFET (Metal Oxide)
    Configuration:
    2 N-Channel (Half Bridge)
    FET Feature:
    Logic Level Gate, 5V Drive
    Drain to Source Voltage (Vdss):
    25V
    Current - Continuous Drain (Id) @ 25°C:
    40A (Ta)
    Rds On (Max) @ Id, Vgs:
    4.5mOhm @ 20A, 5V, 0.8mOhm @ 20A, 5V
    Vgs(th) (Max) @ Id:
    1.85V @ 250µA, 1.5V @ 250µA
    Gate Charge (Qg) (Max) @ Vgs:
    7.9nC @ 4.5V, 19.3nC @ 4.5V
    Input Capacitance (Ciss) (Max) @ Vds:
    1040pF @ 12.5V, 2510pF @ 12.5V
    Power - Max:
    12W (Ta)
    Operating Temperature:
    -55°C ~ 150°C (TJ)
    Grade:
    -
    Qualification:
    -
    Mounting Type:
    Surface Mount
    Supplier Device Package:
    8-VSON-CLIP (5x6)
    Category:
    FET, MOSFET Arrays
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    (1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

    (2)We are informed of the defect described above within 90 days after the delivery of CSD86356Q5D.

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    (1)Inform us within 90 days

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    Images CSD86356Q5D CSD86356Q5DT CSD86356Q5DT CSD86356Q5D
    Part No. CSD86356Q5D CSD86356Q5DT CSD86356Q5DT CSD86356Q5D
    Manufacturer Texas Instruments Texas Instruments Texas Instruments Texas Instruments
    Series * * NexFET™ NexFET™
    Package/Case - - 8-PowerTDFN 8-PowerTDFN
    Packaging Bulk Bulk Tape & Reel (TR) Tape & Reel (TR)
    Product Status Active Active Active Active
    Technology - - MOSFET (Metal Oxide) MOSFET (Metal Oxide)
    Configuration - - 2 N-Channel (Half Bridge) 2 N-Channel (Half Bridge)
    FET Feature - - Logic Level Gate, 5V Drive Logic Level Gate, 5V Drive
    Drain to Source Voltage (Vdss) - - 25V 25V
    Current - Continuous Drain (Id) @ 25°C - - 40A (Ta) 40A (Ta)
    Rds On (Max) @ Id, Vgs - - 4.5mOhm @ 20A, 5V, 0.8mOhm @ 20A, 5V 4.5mOhm @ 20A, 5V, 0.8mOhm @ 20A, 5V
    Vgs(th) (Max) @ Id - - 1.85V @ 250µA, 1.5V @ 250µA 1.85V @ 250µA, 1.5V @ 250µA
    Gate Charge (Qg) (Max) @ Vgs - - 7.9nC @ 4.5V, 19.3nC @ 4.5V 7.9nC @ 4.5V, 19.3nC @ 4.5V
    Input Capacitance (Ciss) (Max) @ Vds - - 1040pF @ 12.5V, 2510pF @ 12.5V 1040pF @ 12.5V, 2510pF @ 12.5V
    Power - Max - - 12W (Ta) 12W (Ta)
    Operating Temperature - - -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
    Grade - - - -
    Qualification - - - -
    Mounting Type - - Surface Mount Surface Mount
    Supplier Device Package - - 8-VSON-CLIP (5x6) 8-VSON-CLIP (5x6)

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