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    Taiwan Semiconductor Corporation TSM200N03DPQ33

    Part No.:
    TSM200N03DPQ33
    Manufacturer:
    Taiwan Semiconductor Corporation
    Category:
    FET, MOSFET Arrays
    Package:
    8-PowerWDFN
    Datasheet:
    BomKey ElectronicsTSM200N03DPQ33.pdf
    Description:
    MOSFET 2N-CH 30V 20A 8PDFN
    Payment:
    Payment
    Shipping:
    Shipping

    Product details

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    • FAQ
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    • Related
    Attributes
    Property Value
    Manufacturer
    Taiwan Semiconductor Corporation
    Series:
    -
    Package/Case:
    8-PowerWDFN
    Packaging:
    Tape & Reel (TR)
    Product Status:
    Active
    Technology:
    MOSFET (Metal Oxide)
    Configuration:
    2 N-Channel
    FET Feature:
    -
    Drain to Source Voltage (Vdss):
    30V
    Current - Continuous Drain (Id) @ 25°C:
    20A (Tc)
    Rds On (Max) @ Id, Vgs:
    20mOhm @ 10A, 10V
    Vgs(th) (Max) @ Id:
    2.5V @ 250µA
    Gate Charge (Qg) (Max) @ Vgs:
    4.1nC @ 4.5V
    Input Capacitance (Ciss) (Max) @ Vds:
    345pF @ 25V
    Power - Max:
    20W (Tc)
    Operating Temperature:
    -55°C ~ 150°C (TJ)
    Grade:
    -
    Qualification:
    -
    Mounting Type:
    Surface Mount
    Supplier Device Package:
    8-PDFN (3x3)
    Category:
    FET, MOSFET Arrays
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    We have a professional and experienced quality control team to strictly verify and test the TSM200N03DPQ33. All suppliers must pass our qualification reviews before they can publish their products including TSM200N03DPQ33 on BomKey Electronics; we pay more attention to the channels and quality of TSM200N03DPQ33 products than any other customer. We strictly implement supplier audits, so you can purchase with confidence. .

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    Warm Tips: It may take up to 24 hours for the carriers to display tracking information. Usually, express delivery takes 3-5 days, and registered mail takes 25-60 days.

    6. What is the process for return or replacement of TSM200N03DPQ33?

    All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the TSM200N03DPQ33 we delivered, we will accept the replacement or return of the TSM200N03DPQ33 only when all of the below conditions are fulfilled:

    (1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

    (2)We are informed of the defect described above within 90 days after the delivery of TSM200N03DPQ33.

    (3)The PartNo is unused and only in the original unpacked packaging.

    Two processes to return the products:

    (1)Inform us within 90 days

    (2)Obtain Requesting Return Authorizations

    7.How to contact us to get technical supports, such as TSM200N03DPQ33 pin diagram, TSM200N03DPQ33 datasheet?

    If you need any after-sales service, please do not hesitate to contact us.

    Images TSM200N03DPQ33 RGG TSM200N03DPQ33
    Part No. TSM200N03DPQ33 RGG TSM200N03DPQ33
    Manufacturer Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation
    Series - -
    Package/Case 8-PowerWDFN 8-PowerWDFN
    Packaging Tape & Reel (TR) Tape & Reel (TR)
    Product Status Active Active
    Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
    Configuration 2 N-Channel (Dual) 2 N-Channel
    FET Feature - -
    Drain to Source Voltage (Vdss) 30V 30V
    Current - Continuous Drain (Id) @ 25°C 20A (Tc) 20A (Tc)
    Rds On (Max) @ Id, Vgs 20mOhm @ 10A, 10V 20mOhm @ 10A, 10V
    Vgs(th) (Max) @ Id 2.5V @ 250µA 2.5V @ 250µA
    Gate Charge (Qg) (Max) @ Vgs 4nC @ 4.5V 4.1nC @ 4.5V
    Input Capacitance (Ciss) (Max) @ Vds 345pF @ 25V 345pF @ 25V
    Power - Max 20W 20W (Tc)
    Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
    Grade - -
    Qualification - -
    Mounting Type Surface Mount Surface Mount
    Supplier Device Package 8-PDFN (3x3) 8-PDFN (3x3)

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