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    Rohm Semiconductor RQ3L050GNTB

    Part No.:
    RQ3L050GNTB
    Manufacturer:
    Rohm Semiconductor
    Category:
    FETs, MOSFETs
    Package:
    8-PowerVDFN
    Datasheet:
    BomKey ElectronicsRQ3L050GNTB.pdf
    Description:
    MOSFET N-CHANNEL 60V 12A 8HSMT
    Payment:
    Payment
    Shipping:
    Shipping

    Product details

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    Attributes
    Property Value
    Manufacturer
    Rohm Semiconductor
    Series:
    -
    Package/Case:
    8-PowerVDFN
    Packaging:
    Tape & Reel (TR)
    Product Status:
    Not For New Designs
    FET Type:
    N-Channel
    Technology:
    MOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss):
    60 V
    Current - Continuous Drain (Id) @ 25°C:
    12A (Tc)
    Drive Voltage (Max Rds On, Min Rds On):
    4.5V, 10V
    Rds On (Max) @ Id, Vgs:
    61mOhm @ 5A, 10V
    Vgs(th) (Max) @ Id:
    2.5V @ 25µA
    Gate Charge (Qg) (Max) @ Vgs:
    2.8 nC @ 4.5 V
    Vgs (Max):
    ±20V
    Input Capacitance (Ciss) (Max) @ Vds:
    300 pF @ 30 V
    FET Feature:
    -
    Power Dissipation (Max):
    14.8W (Tc)
    Operating Temperature:
    150°C (TJ)
    Grade:
    -
    Qualification:
    -
    Mounting Type:
    Surface Mount
    Supplier Device Package:
    8-HSMT (3.2x3)
    Category:
    FETs, MOSFETs
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    Currently,, BomKey Electronics only provide peer-to-peer order processing. While you submit the RFQ, our professional agent will contact you with the competitive prices in the global market, and our agent will prompt you to finish the order if you accept our offers.

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    We have a professional and experienced quality control team to strictly verify and test the RQ3L050GNTB. All suppliers must pass our qualification reviews before they can publish their products including RQ3L050GNTB on BomKey Electronics; we pay more attention to the channels and quality of RQ3L050GNTB products than any other customer. We strictly implement supplier audits, so you can purchase with confidence. .

    3. Are the RQ3L050GNTB price and inventory displayed accurate?

    The price and inventory of RQ3L050GNTB fluctuates frequently and cannot be updated in time, it will be updated periodically within 24 hours. And, our quotation usually expires after 5 days.

    4. What forms of payment are accepted?

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    Warm Tips: It may take up to 24 hours for the carriers to display tracking information. Usually, express delivery takes 3-5 days, and registered mail takes 25-60 days.

    6. What is the process for return or replacement of RQ3L050GNTB?

    All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the RQ3L050GNTB we delivered, we will accept the replacement or return of the RQ3L050GNTB only when all of the below conditions are fulfilled:

    (1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

    (2)We are informed of the defect described above within 90 days after the delivery of RQ3L050GNTB.

    (3)The PartNo is unused and only in the original unpacked packaging.

    Two processes to return the products:

    (1)Inform us within 90 days

    (2)Obtain Requesting Return Authorizations

    7.How to contact us to get technical supports, such as RQ3L050GNTB pin diagram, RQ3L050GNTB datasheet?

    If you need any after-sales service, please do not hesitate to contact us.

    Images RQ3L050GNTB
    Part No. RQ3L050GNTB
    Manufacturer Rohm Semiconductor
    Series -
    Package/Case 8-PowerVDFN
    Packaging Tape & Reel (TR)
    Product Status Not For New Designs
    FET Type N-Channel
    Technology MOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss) 60 V
    Current - Continuous Drain (Id) @ 25°C 12A (Tc)
    Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
    Rds On (Max) @ Id, Vgs 61mOhm @ 5A, 10V
    Vgs(th) (Max) @ Id 2.5V @ 25µA
    Gate Charge (Qg) (Max) @ Vgs 2.8 nC @ 4.5 V
    Vgs (Max) ±20V
    Input Capacitance (Ciss) (Max) @ Vds 300 pF @ 30 V
    FET Feature -
    Power Dissipation (Max) 14.8W (Tc)
    Operating Temperature 150°C (TJ)
    Grade -
    Qualification -
    Mounting Type Surface Mount
    Supplier Device Package 8-HSMT (3.2x3)

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