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    Microchip Technology APT1001RBN

    Part No.:
    APT1001RBN
    Manufacturer:
    Microchip Technology
    Category:
    FETs, MOSFETs
    Package:
    TO-247-3
    Datasheet:
    BomKey ElectronicsAPT1001RBN.pdf
    Description:
    MOSFET N-CH 1000V 11A TO247AD
    Payment:
    Payment
    Shipping:
    Shipping

    Product details

    • Specifications
    • FAQ
    • Comparison
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    Attributes
    Property Value
    Manufacturer
    Microchip Technology
    Series:
    POWER MOS IV®
    Package/Case:
    TO-247-3
    Packaging:
    Tube
    Product Status:
    Obsolete
    FET Type:
    N-Channel
    Technology:
    MOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss):
    1000 V
    Current - Continuous Drain (Id) @ 25°C:
    11A (Tc)
    Drive Voltage (Max Rds On, Min Rds On):
    10V
    Rds On (Max) @ Id, Vgs:
    1Ohm @ 5.5A, 10V
    Vgs(th) (Max) @ Id:
    4V @ 1mA
    Gate Charge (Qg) (Max) @ Vgs:
    130 nC @ 10 V
    Vgs (Max):
    ±30V
    Input Capacitance (Ciss) (Max) @ Vds:
    2950 pF @ 25 V
    FET Feature:
    -
    Power Dissipation (Max):
    310W (Tc)
    Operating Temperature:
    -55°C ~ 150°C (TJ)
    Grade:
    -
    Qualification:
    -
    Mounting Type:
    Through Hole
    Supplier Device Package:
    TO-247AD
    Category:
    FETs, MOSFETs
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    We have a professional and experienced quality control team to strictly verify and test the APT1001RBN. All suppliers must pass our qualification reviews before they can publish their products including APT1001RBN on BomKey Electronics; we pay more attention to the channels and quality of APT1001RBN products than any other customer. We strictly implement supplier audits, so you can purchase with confidence. .

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    6. What is the process for return or replacement of APT1001RBN?

    All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the APT1001RBN we delivered, we will accept the replacement or return of the APT1001RBN only when all of the below conditions are fulfilled:

    (1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

    (2)We are informed of the defect described above within 90 days after the delivery of APT1001RBN.

    (3)The PartNo is unused and only in the original unpacked packaging.

    Two processes to return the products:

    (1)Inform us within 90 days

    (2)Obtain Requesting Return Authorizations

    7.How to contact us to get technical supports, such as APT1001RBN pin diagram, APT1001RBN datasheet?

    If you need any after-sales service, please do not hesitate to contact us.

    Images APT1001RBN
    Part No. APT1001RBN
    Manufacturer Microchip Technology
    Series POWER MOS IV®
    Package/Case TO-247-3
    Packaging Tube
    Product Status Obsolete
    FET Type N-Channel
    Technology MOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss) 1000 V
    Current - Continuous Drain (Id) @ 25°C 11A (Tc)
    Drive Voltage (Max Rds On, Min Rds On) 10V
    Rds On (Max) @ Id, Vgs 1Ohm @ 5.5A, 10V
    Vgs(th) (Max) @ Id 4V @ 1mA
    Gate Charge (Qg) (Max) @ Vgs 130 nC @ 10 V
    Vgs (Max) ±30V
    Input Capacitance (Ciss) (Max) @ Vds 2950 pF @ 25 V
    FET Feature -
    Power Dissipation (Max) 310W (Tc)
    Operating Temperature -55°C ~ 150°C (TJ)
    Grade -
    Qualification -
    Mounting Type Through Hole
    Supplier Device Package TO-247AD

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