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    Infineon Technologies IRF9910TR

    Part No.:
    IRF9910TR
    Manufacturer:
    Infineon Technologies
    Category:
    FET, MOSFET Arrays
    Package:
    8-SOIC (0.154", 3.90mm Width)
    Datasheet:
    BomKey ElectronicsIRF9910TR.pdf
    Description:
    MOSFET 2N-CH 20V 10A/12A 8SO
    Payment:
    Payment
    Shipping:
    Shipping

    Product details

    • Specifications
    • FAQ
    • Comparison
    • Related
    Attributes
    Property Value
    Manufacturer
    Infineon Technologies
    Series:
    HEXFET®
    Package/Case:
    8-SOIC (0.154", 3.90mm Width)
    Packaging:
    Tape & Reel (TR)
    Product Status:
    Obsolete
    Technology:
    MOSFET (Metal Oxide)
    Configuration:
    2 N-Channel (Dual)
    FET Feature:
    Logic Level Gate
    Drain to Source Voltage (Vdss):
    20V
    Current - Continuous Drain (Id) @ 25°C:
    10A, 12A
    Rds On (Max) @ Id, Vgs:
    13.4mOhm @ 10A, 10V
    Vgs(th) (Max) @ Id:
    2.55V @ 250µA
    Gate Charge (Qg) (Max) @ Vgs:
    11nC @ 4.5V
    Input Capacitance (Ciss) (Max) @ Vds:
    900pF @ 10V
    Power - Max:
    2W
    Operating Temperature:
    -55°C ~ 150°C (TJ)
    Grade:
    -
    Qualification:
    -
    Mounting Type:
    Surface Mount
    Supplier Device Package:
    8-SO
    Category:
    FET, MOSFET Arrays
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    6. What is the process for return or replacement of IRF9910TR?

    All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the IRF9910TR we delivered, we will accept the replacement or return of the IRF9910TR only when all of the below conditions are fulfilled:

    (1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

    (2)We are informed of the defect described above within 90 days after the delivery of IRF9910TR.

    (3)The PartNo is unused and only in the original unpacked packaging.

    Two processes to return the products:

    (1)Inform us within 90 days

    (2)Obtain Requesting Return Authorizations

    7.How to contact us to get technical supports, such as IRF9910TR pin diagram, IRF9910TR datasheet?

    If you need any after-sales service, please do not hesitate to contact us.

    Images IRF9910TR IRF9910TRPBF IRF9910TRPBF-1
    Part No. IRF9910TR IRF9910TRPBF IRF9910TRPBF-1
    Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
    Series HEXFET® HEXFET® HEXFET®
    Package/Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)
    Packaging Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR)
    Product Status Obsolete Obsolete Obsolete
    Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
    Configuration 2 N-Channel (Dual) 2 N-Channel (Dual) 2 N-Channel (Dual)
    FET Feature Logic Level Gate Logic Level Gate -
    Drain to Source Voltage (Vdss) 20V 20V 20V
    Current - Continuous Drain (Id) @ 25°C 10A, 12A 10A, 12A 10A (Ta), 12A (Ta)
    Rds On (Max) @ Id, Vgs 13.4mOhm @ 10A, 10V 9.3mOhm @ 12A, 10V 13.4mOhm @ 10A, 10V, 9.3mOhm @ 12A, 10V
    Vgs(th) (Max) @ Id 2.55V @ 250µA 2.55V @ 250µA 2.55V @ 250µA
    Gate Charge (Qg) (Max) @ Vgs 11nC @ 4.5V 11nC @ 4.5V 11nC @ 4.5V, 23nC @ 4.5V
    Input Capacitance (Ciss) (Max) @ Vds 900pF @ 10V 900pF @ 10V 900pF @ 10V, 1860pF @ 10V
    Power - Max 2W 2W 2W (Ta)
    Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
    Grade - - -
    Qualification - - -
    Mounting Type Surface Mount Surface Mount Surface Mount
    Supplier Device Package 8-SO 8-SO 8-SOIC

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