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    Infineon Technologies BSP129L6327

    Part No.:
    BSP129L6327
    Manufacturer:
    Infineon Technologies
    Category:
    FETs, MOSFETs
    Package:
    TO-261-4, TO-261AA
    Datasheet:
    BomKey ElectronicsBSP129L6327.pdf
    Description:
    N-CHANNEL POWER MOSFET
    Payment:
    Payment
    Shipping:
    Shipping

    Product details

    • Specifications
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    Attributes
    Property Value
    Manufacturer
    Infineon Technologies
    Series:
    SIPMOS®
    Package/Case:
    TO-261-4, TO-261AA
    Packaging:
    Bulk
    Product Status:
    Active
    FET Type:
    N-Channel, Depletion Mode
    Technology:
    MOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss):
    240 V
    Current - Continuous Drain (Id) @ 25°C:
    350mA (Ta)
    Drive Voltage (Max Rds On, Min Rds On):
    0V, 10V
    Rds On (Max) @ Id, Vgs:
    6Ohm @ 350mA, 10V
    Vgs(th) (Max) @ Id:
    1V @ 108µA
    Gate Charge (Qg) (Max) @ Vgs:
    5.7 nC @ 5 V
    Vgs (Max):
    ±20V
    Input Capacitance (Ciss) (Max) @ Vds:
    108 pF @ 25 V
    FET Feature:
    -
    Power Dissipation (Max):
    1.8W (Ta)
    Operating Temperature:
    -55°C ~ 150°C (TJ)
    Grade:
    -
    Qualification:
    -
    Mounting Type:
    Surface Mount
    Supplier Device Package:
    PG-SOT223-4-21
    Category:
    FETs, MOSFETs
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    Warm Tips: It may take up to 24 hours for the carriers to display tracking information. Usually, express delivery takes 3-5 days, and registered mail takes 25-60 days.

    6. What is the process for return or replacement of BSP129L6327?

    All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the BSP129L6327 we delivered, we will accept the replacement or return of the BSP129L6327 only when all of the below conditions are fulfilled:

    (1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

    (2)We are informed of the defect described above within 90 days after the delivery of BSP129L6327.

    (3)The PartNo is unused and only in the original unpacked packaging.

    Two processes to return the products:

    (1)Inform us within 90 days

    (2)Obtain Requesting Return Authorizations

    7.How to contact us to get technical supports, such as BSP129L6327 pin diagram, BSP129L6327 datasheet?

    If you need any after-sales service, please do not hesitate to contact us.

    Images BSP129L6327HTSA1 BSP129L6327
    Part No. BSP129L6327HTSA1 BSP129L6327
    Manufacturer Infineon Technologies Infineon Technologies
    Series SIPMOS® SIPMOS®
    Package/Case TO-261-4, TO-261AA TO-261-4, TO-261AA
    Packaging Tape & Reel (TR) Bulk
    Product Status Obsolete Active
    FET Type N-Channel, Depletion Mode N-Channel, Depletion Mode
    Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss) 240 V 240 V
    Current - Continuous Drain (Id) @ 25°C 350mA (Ta) 350mA (Ta)
    Drive Voltage (Max Rds On, Min Rds On) 0V, 10V 0V, 10V
    Rds On (Max) @ Id, Vgs 6Ohm @ 350mA, 10V 6Ohm @ 350mA, 10V
    Vgs(th) (Max) @ Id 1V @ 108µA 1V @ 108µA
    Gate Charge (Qg) (Max) @ Vgs 5.7 nC @ 5 V 5.7 nC @ 5 V
    Vgs (Max) ±20V ±20V
    Input Capacitance (Ciss) (Max) @ Vds 108 pF @ 25 V 108 pF @ 25 V
    FET Feature - -
    Power Dissipation (Max) 1.8W (Ta) 1.8W (Ta)
    Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
    Grade - -
    Qualification - -
    Mounting Type Surface Mount Surface Mount
    Supplier Device Package PG-SOT223-4-21 PG-SOT223-4-21

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