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    Goford Semiconductor G2K3N10L6

    Part No.:
    G2K3N10L6
    Manufacturer:
    Goford Semiconductor
    Category:
    FET, MOSFET Arrays
    Package:
    SOT-23-6
    Datasheet:
    BomKey ElectronicsG2K3N10L6.pdf
    Description:
    MOSFET 2N-CH 100V 3A SOT23-6L
    Payment:
    Payment
    Shipping:
    Shipping

    Product details

    • Specifications
    • FAQ
    • Comparison
    • Related
    Attributes
    Property Value
    Manufacturer
    Goford Semiconductor
    Series:
    TrenchFET®
    Package/Case:
    SOT-23-6
    Packaging:
    Cut Tape (CT)
    Product Status:
    Active
    Technology:
    MOSFET (Metal Oxide)
    Configuration:
    2 N-Channel (Dual)
    FET Feature:
    -
    Drain to Source Voltage (Vdss):
    100V
    Current - Continuous Drain (Id) @ 25°C:
    3A (Tc)
    Rds On (Max) @ Id, Vgs:
    220mOhm @ 2A, 10V
    Vgs(th) (Max) @ Id:
    2.2V @ 250µA
    Gate Charge (Qg) (Max) @ Vgs:
    4.8nC @ 4.5V
    Input Capacitance (Ciss) (Max) @ Vds:
    536pF @ 50V
    Power - Max:
    1.67W (Tc)
    Operating Temperature:
    -55°C ~ 150°C (TJ)
    Grade:
    -
    Qualification:
    -
    Mounting Type:
    Surface Mount
    Supplier Device Package:
    SOT-23-6L
    Category:
    FET, MOSFET Arrays
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    (1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

    (2)We are informed of the defect described above within 90 days after the delivery of G2K3N10L6.

    (3)The PartNo is unused and only in the original unpacked packaging.

    Two processes to return the products:

    (1)Inform us within 90 days

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    Images G2K3N10L6
    Part No. G2K3N10L6
    Manufacturer Goford Semiconductor
    Series TrenchFET®
    Package/Case SOT-23-6
    Packaging Cut Tape (CT)
    Product Status Active
    Technology MOSFET (Metal Oxide)
    Configuration 2 N-Channel (Dual)
    FET Feature -
    Drain to Source Voltage (Vdss) 100V
    Current - Continuous Drain (Id) @ 25°C 3A (Tc)
    Rds On (Max) @ Id, Vgs 220mOhm @ 2A, 10V
    Vgs(th) (Max) @ Id 2.2V @ 250µA
    Gate Charge (Qg) (Max) @ Vgs 4.8nC @ 4.5V
    Input Capacitance (Ciss) (Max) @ Vds 536pF @ 50V
    Power - Max 1.67W (Tc)
    Operating Temperature -55°C ~ 150°C (TJ)
    Grade -
    Qualification -
    Mounting Type Surface Mount
    Supplier Device Package SOT-23-6L

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