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    Cambridge GaN Devices CGD65B200S2-T13

    Part No.:
    CGD65B200S2-T13
    Manufacturer:
    Cambridge GaN Devices
    Category:
    FETs, MOSFETs
    Package:
    8-PowerVDFN
    Datasheet:
    BomKey ElectronicsCGD65B200S2-T13.pdf
    Description:
    650V GAN HEMT, 200MOHM, DFN5X6.
    Payment:
    Payment
    Shipping:
    Shipping

    Product details

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    Attributes
    Property Value
    Manufacturer
    Cambridge GaN Devices
    Series:
    ICeGaN™
    Package/Case:
    8-PowerVDFN
    Packaging:
    Cut Tape (CT)
    Product Status:
    Active
    FET Type:
    -
    Technology:
    GaNFET (Gallium Nitride)
    Drain to Source Voltage (Vdss):
    650 V
    Current - Continuous Drain (Id) @ 25°C:
    8.5A (Tc)
    Drive Voltage (Max Rds On, Min Rds On):
    9V, 20V
    Rds On (Max) @ Id, Vgs:
    280mOhm @ 600mA, 12V
    Vgs(th) (Max) @ Id:
    4.2V @ 2.75mA
    Gate Charge (Qg) (Max) @ Vgs:
    1.4 nC @ 12 V
    Vgs (Max):
    +20V, -1V
    Input Capacitance (Ciss) (Max) @ Vds:
    -
    FET Feature:
    Current Sensing
    Power Dissipation (Max):
    -
    Operating Temperature:
    -55°C ~ 150°C (TJ)
    Grade:
    -
    Qualification:
    -
    Mounting Type:
    Surface Mount
    Supplier Device Package:
    8-DFN (5x6)
    Category:
    FETs, MOSFETs
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    1. How to order CGD65B200S2-T13 on BomKey Electronics?

    Currently,, BomKey Electronics only provide peer-to-peer order processing. While you submit the RFQ, our professional agent will contact you with the competitive prices in the global market, and our agent will prompt you to finish the order if you accept our offers.

    2. How does BomKey Electronics guarantee that CGD65B200S2-T13 is from the original manufacturer or authorized agents?

    We have a professional and experienced quality control team to strictly verify and test the CGD65B200S2-T13. All suppliers must pass our qualification reviews before they can publish their products including CGD65B200S2-T13 on BomKey Electronics; we pay more attention to the channels and quality of CGD65B200S2-T13 products than any other customer. We strictly implement supplier audits, so you can purchase with confidence. .

    3. Are the CGD65B200S2-T13 price and inventory displayed accurate?

    The price and inventory of CGD65B200S2-T13 fluctuates frequently and cannot be updated in time, it will be updated periodically within 24 hours. And, our quotation usually expires after 5 days.

    4. What forms of payment are accepted?

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    Once your order has been processed for shipment, our salesperson will send you an email advising you of the shipping status and tracking number.

    Warm Tips: It may take up to 24 hours for the carriers to display tracking information. Usually, express delivery takes 3-5 days, and registered mail takes 25-60 days.

    6. What is the process for return or replacement of CGD65B200S2-T13?

    All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the CGD65B200S2-T13 we delivered, we will accept the replacement or return of the CGD65B200S2-T13 only when all of the below conditions are fulfilled:

    (1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

    (2)We are informed of the defect described above within 90 days after the delivery of CGD65B200S2-T13.

    (3)The PartNo is unused and only in the original unpacked packaging.

    Two processes to return the products:

    (1)Inform us within 90 days

    (2)Obtain Requesting Return Authorizations

    7.How to contact us to get technical supports, such as CGD65B200S2-T13 pin diagram, CGD65B200S2-T13 datasheet?

    If you need any after-sales service, please do not hesitate to contact us.

    Images CGD65B200S2-T13
    Part No. CGD65B200S2-T13
    Manufacturer Cambridge GaN Devices
    Series ICeGaN™
    Package/Case 8-PowerVDFN
    Packaging Cut Tape (CT)
    Product Status Active
    FET Type -
    Technology GaNFET (Gallium Nitride)
    Drain to Source Voltage (Vdss) 650 V
    Current - Continuous Drain (Id) @ 25°C 8.5A (Tc)
    Drive Voltage (Max Rds On, Min Rds On) 9V, 20V
    Rds On (Max) @ Id, Vgs 280mOhm @ 600mA, 12V
    Vgs(th) (Max) @ Id 4.2V @ 2.75mA
    Gate Charge (Qg) (Max) @ Vgs 1.4 nC @ 12 V
    Vgs (Max) +20V, -1V
    Input Capacitance (Ciss) (Max) @ Vds -
    FET Feature Current Sensing
    Power Dissipation (Max) -
    Operating Temperature -55°C ~ 150°C (TJ)
    Grade -
    Qualification -
    Mounting Type Surface Mount
    Supplier Device Package 8-DFN (5x6)

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