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Manufacturer Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction

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Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
NC1D120C40GTDN

NC1D120C40GTDN

SiC Diode 1200V 40A Dual Die TO2

NextGen Components

300
RFQ
NC1D120C40GTDN

Datasheet

NC1D TO-247-3L Tube Active SiC (Silicon Carbide) Schottky 1.2 kV 40A 1.6 V @ 10 A No Recovery Time > 500mA (Io) - 50 µA @ 1.2 kV 1371pF @ 100mV, 1MHz - - Through Hole TO-247-3L -55°C ~ 175°C
NC1D120C60GTDN

NC1D120C60GTDN

SiC Schottky 1200V 60A TO247- 3L

NextGen Components

300
RFQ
NC1D120C60GTDN

Datasheet

- TO-247-3L Tube Active SiC (Silicon Carbide) Schottky - 60A - - - - 2125pF @ 0.1V, 1MHz - - Surface Mount TO-247-3L -55°C ~ 175°C
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