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    Single Diodes

    Manufacturer Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction

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    Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
    IV1D06006O2

    IV1D06006O2

    DIODE SIL CARB 650V 17.4A TO220

    Inventchip

    132
    RFQ
    IV1D06006O2

    Datasheet

    - TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 17.4A 1.65 V @ 6 A No Recovery Time > 500mA (Io) 0 ns 10 µA @ 650 V 212pF @ 1V, 1MHz - - Through Hole TO-220-2 -55°C ~ 175°C
    IV1D06006P3

    IV1D06006P3

    DIODE SIC 650V 16.7A TO252-3

    Inventchip

    2,481
    RFQ
    IV1D06006P3

    Datasheet

    - TO-252-3, DPAK (2 Leads + Tab), SC-63 Cut Tape (CT) Active SiC (Silicon Carbide) Schottky 650 V 16.7A 1.65 V @ 6 A No Recovery Time > 500mA (Io) 0 ns 10 µA @ 650 V 224pF @ 1V, 1MHz - - Surface Mount TO-252-3 -55°C ~ 175°C
    IV1D12005O2

    IV1D12005O2

    DIODE SIL CARB 1.2KV 17A TO220-2

    Inventchip

    164
    RFQ
    IV1D12005O2

    Datasheet

    - TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 17A 1.8 V @ 5 A No Recovery Time > 500mA (Io) 0 ns 30 µA @ 1200 V 320pF @ 1V, 1MHz - - Through Hole TO-220-2 -55°C ~ 175°C
    IV1D12010O2

    IV1D12010O2

    DIODE SIL CARB 1.2KV 28A TO220-2

    Inventchip

    190
    RFQ
    IV1D12010O2

    Datasheet

    - TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 28A 1.8 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 50 µA @ 1200 V 575pF @ 1V, 1MHz - - Through Hole TO-220-2 -55°C ~ 175°C
    IV1D12010T2

    IV1D12010T2

    DIODE SIL CARB 1.2KV 30A TO247-2

    Inventchip

    107
    RFQ
    IV1D12010T2

    Datasheet

    - TO-247-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 30A 1.8 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 50 µA @ 1200 V 575pF @ 1V, 1MHz - - Through Hole TO-247-2 -55°C ~ 175°C
    IV1D12015T2

    IV1D12015T2

    DIODE SIL CARB 1.2KV 44A TO247-2

    Inventchip

    120
    RFQ
    IV1D12015T2

    Datasheet

    - TO-247-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 44A 1.8 V @ 15 A No Recovery Time > 500mA (Io) 0 ns 80 µA @ 1200 V 888pF @ 1V, 1MHz - - Through Hole TO-247-2 -55°C ~ 175°C
    IV1D12020T2

    IV1D12020T2

    DIODE SIL CARB 1.2KV 54A TO247-2

    Inventchip

    110
    RFQ
    IV1D12020T2

    Datasheet

    - TO-247-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 54A 1.8 V @ 20 A No Recovery Time > 500mA (Io) 0 ns 120 µA @ 1200 V 1114pF @ 1V, 1MHz - - Through Hole TO-247-2 -55°C ~ 175°C
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