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    Diode Arrays

    Manufacturer Series Package/Case Packaging Product Status Diode Configuration Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) (per Diode) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Operating Temperature - Junction Grade Qualification Mounting Type Supplier Device Package

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    Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Diode Configuration Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) (per Diode) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Operating Temperature - Junction Grade Qualification Mounting Type Supplier Device Package
    TRS24N65D,S1F

    TRS24N65D,S1F

    DIODE ARR SCHOTT 650V 12A TO-247

    Toshiba Semiconductor and Storage

    3,443
    RFQ
    TRS24N65D,S1F

    Datasheet

    - TO-247-3 Tube Obsolete 1 Pair Common Cathode Schottky 650 V 12A (DC) 1.7 V @ 12 A Fast Recovery =< 500ns, > 200mA (Io) - 90 µA @ 650 V 175°C (Max) - - Through Hole TO-247
    1SS184S,LF(D

    1SS184S,LF(D

    DIODE ARRAY GP 80V 100MA S-MINI

    Toshiba Semiconductor and Storage

    3,597
    RFQ
    1SS184S,LF(D

    Datasheet

    - TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Obsolete 1 Pair Common Cathode Standard 80 V 100mA 1.2 V @ 100 mA Small Signal =< 200mA (Io), Any Speed 4 ns 500 nA @ 80 V 125°C (Max) - - Surface Mount S-Mini
    TRS12N65FB,S1F(S

    TRS12N65FB,S1F(S

    DIODE ARRAY SIC 650V 6A TO-247

    Toshiba Semiconductor and Storage

    3,855
    RFQ
    TRS12N65FB,S1F(S

    Datasheet

    - TO-247-3 Tube Active 1 Pair Common Cathode SiC (Silicon Carbide) Schottky 650 V 6A (DC) 1.7 V @ 6 A No Recovery Time > 500mA (Io) 0 ns 90 µA @ 650 V 175°C (Max) - - Through Hole TO-247
    TRS20N65FB,S1F(S

    TRS20N65FB,S1F(S

    DIODE ARRAY SIC 650V 10A TO-247

    Toshiba Semiconductor and Storage

    4,952
    RFQ
    TRS20N65FB,S1F(S

    Datasheet

    - TO-247-3 Tube Active 1 Pair Common Cathode SiC (Silicon Carbide) Schottky 650 V 10A (DC) 1.7 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 90 µA @ 650 V 175°C (Max) - - Through Hole TO-247
    TRS24N65FB,S1F(S

    TRS24N65FB,S1F(S

    DIODE ARRAY SIC 650V 12A TO-247

    Toshiba Semiconductor and Storage

    3,195
    RFQ
    TRS24N65FB,S1F(S

    Datasheet

    - TO-247-3 Tube Active 1 Pair Common Cathode SiC (Silicon Carbide) Schottky 650 V 12A (DC) 1.7 V @ 12 A No Recovery Time > 500mA (Io) 0 ns 90 µA @ 650 V 175°C (Max) - - Through Hole TO-247
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