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    Single IGBTs

    Manufacturer Series Package/Case Packaging Product Status IGBT Type Voltage - Collector Emitter Breakdown (Max) Current - Collector (Ic) (Max) Current - Collector Pulsed (Icm) Vce(on) (Max) @ Vge, Ic Power - Max Switching Energy Input Type Gate Charge Td (on/off) @ 25°C Test Condition Reverse Recovery Time (trr) Operating Temperature Grade Qualification Mounting Type Supplier Device Package

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    Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status IGBT Type Voltage - Collector Emitter Breakdown (Max) Current - Collector (Ic) (Max) Current - Collector Pulsed (Icm) Vce(on) (Max) @ Vge, Ic Power - Max Switching Energy Input Type Gate Charge Td (on/off) @ 25°C Test Condition Reverse Recovery Time (trr) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
    GT15J341,S4X

    GT15J341,S4X

    IGBT 600V 15A TO220SIS

    Toshiba Semiconductor and Storage

    155
    RFQ
    GT15J341,S4X

    Datasheet

    - TO-220-3 Full Pack Tube Active - 600 V 15 A 60 A 2V @ 15V, 15A 30 W 300µJ (on), 300µJ (off) Standard - 60ns/170ns 300V, 15A, 33Ohm, 15V 80 ns 150°C (TJ) - - Through Hole TO-220SIS
    GT30J121(Q)

    GT30J121(Q)

    IGBT 600V 30A 170W TO3PN

    Toshiba Semiconductor and Storage

    137
    RFQ
    GT30J121(Q)

    Datasheet

    - TO-3P-3, SC-65-3 Tube Active - 600 V 30 A 60 A 2.45V @ 15V, 30A 170 W 1mJ (on), 800µJ (off) Standard - 90ns/300ns 300V, 30A, 24Ohm, 15V - - - - Through Hole TO-3P(N)
    GT40WR21,Q

    GT40WR21,Q

    IGBT 1350V 40A TO3P

    Toshiba Semiconductor and Storage

    106
    RFQ
    GT40WR21,Q

    Datasheet

    - TO-3P-3, SC-65-3 Tray Active - 1350 V 40 A 80 A 5.9V @ 15V, 40A 375 W - Standard - - - - 175°C (TJ) - - Through Hole TO-3P(N)
    GT40RR21(STA1,E

    GT40RR21(STA1,E

    IGBT 1200V 40A TO3P

    Toshiba Semiconductor and Storage

    2,064
    RFQ
    GT40RR21(STA1,E

    Datasheet

    - TO-3P-3, SC-65-3 Tube Active - 1200 V 40 A 200 A 2.8V @ 15V, 40A 230 W -, 540µJ (off) Standard - - 280V, 40A, 10Ohm, 20V 600 ns 175°C (TJ) - - Through Hole TO-3P(N)
    GT30N135SRA,S1E

    GT30N135SRA,S1E

    IGBT 1350V 60A TO247

    Toshiba Semiconductor and Storage

    4,515
    RFQ
    GT30N135SRA,S1E

    Datasheet

    - TO-247-3 Tube Active - 1350 V 60 A 120 A 2.6V @ 15V, 60A 348 W -, 1.3mJ (off) Standard 270 nC - 300V, 60A, 39Ohm, 15V - 175°C (TJ) - - Through Hole TO-247
    GT20J341,S4X(S

    GT20J341,S4X(S

    DISCRETE IGBT TRANSISTOR TO-220S

    Toshiba Semiconductor and Storage

    3,764
    RFQ
    GT20J341,S4X(S

    Datasheet

    - TO-220-3 Full Pack Tube Active - 600 V 20 A 80 A 2V @ 15V, 20A 45 W 500µJ (on), 400µJ (off) Standard - 60ns/240ns 300V, 20A, 33Ohm, 15V 90 ns 150°C (TJ) - - Through Hole TO-220SIS
    GT30J65MRB,S1E

    GT30J65MRB,S1E

    650V SILICON N-CHANNEL IGBT, TO-

    Toshiba Semiconductor and Storage

    3,917
    RFQ
    GT30J65MRB,S1E

    Datasheet

    - TO-3P-3, SC-65-3 Tube Active - 650 V 60 A - 1.8V @ 15V, 30A 200 W 1.4mJ (on), 220µJ (off) Standard 70 nC 75ns/400ns 400V, 15A, 56Ohm, 15V 200 ns 175°C (TJ) - - Through Hole TO-3P(N)
    GT40QR21(STA1,E,D

    GT40QR21(STA1,E,D

    IGBT 1200V 40A TO3P

    Toshiba Semiconductor and Storage

    3,981
    RFQ
    GT40QR21(STA1,E,D

    Datasheet

    - TO-3P-3, SC-65-3 Tube Active - 1200 V 40 A 80 A 2.7V @ 15V, 40A 230 W -, 290µJ (off) Standard - - 280V, 40A, 10Ohm, 20V 600 ns 175°C (TJ) - - Through Hole TO-3P(N)
    GT50N322A

    GT50N322A

    IGBT 1000V 50A TO3P

    Toshiba Semiconductor and Storage

    4,886
    RFQ
    GT50N322A

    Datasheet

    - TO-3P-3, SC-65-3 Tray Active - 1000 V 50 A 120 A 2.8V @ 15V, 60A 156 W - Standard - - - 800 ns 150°C (TJ) - - Through Hole TO-3P(N)
    GT50JR21(STA1,E,S)

    GT50JR21(STA1,E,S)

    PB-F IGBT / TRANSISTOR TO-3PN(OS

    Toshiba Semiconductor and Storage

    4,509
    RFQ
    GT50JR21(STA1,E,S)

    Datasheet

    - TO-3P-3, SC-65-3 Tube Active - 600 V 50 A 100 A 2V @ 15V, 50A 230 W - Standard - - - - 175°C (TJ) - - Through Hole TO-3P(N)
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