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      Home > All Categories  > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

      FETs, MOSFETs

      Manufacturer Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package

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      Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
      S2M0080120D

      S2M0080120D

      MOSFET SILICON CARBIDE SIC 1200V

      SMC Diode Solutions

      		 211
      RFQ
      		S2M0080120D

      Datasheet

             		- TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 41A (Tc) 20V 100mOhm @ 20A, 20V 4V @ 10mA 54 nC @ 20 V +25V, -10V 1324 pF @ 1000 V - 231W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247AD
      S2M0080120K

      S2M0080120K

      MOSFET SILICON CARBIDE SIC 1200V

      SMC Diode Solutions

      		 260
      RFQ
      		S2M0080120K

      Datasheet

             		- TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 41A (Tc) 20V 100mOhm @ 20A, 20V 4V @ 10mA 54 nC @ 20 V +25V, -10V 1324 pF @ 1000 V - 231W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247-4
      S2M0040120D

      S2M0040120D

      MOSFET SILICON CARBIDE SIC 1200V

      SMC Diode Solutions

      		 221
      RFQ
      		S2M0040120D

      Datasheet

             		- TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V - - - - - - - - - - - - Through Hole TO-247-3
      S2M0040120K

      S2M0040120K

      MOSFET SILICON CARBIDE SIC 1200V

      SMC Diode Solutions

      		 103
      RFQ
      		S2M0040120K

      Datasheet

             		- TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V - - - - - - - - - - - - Through Hole TO-247-4
      S2M0025120D

      S2M0025120D

      MOSFET SILICON CARBIDE SIC 1200V

      SMC Diode Solutions

      		 300
      RFQ
      		S2M0025120D

      Datasheet

             		- TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 63A (Tj) 20V 34mOhm @ 50A, 20V 4V @ 15mA 130 nC @ 20 V +25V, -10V 4402 pF @ 1000 V - 446W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247AD
      S2M0025120K

      S2M0025120K

      MOSFET SILICON CARBIDE SIC 1200V

      SMC Diode Solutions

      		 270
      RFQ
      		S2M0025120K

      Datasheet

             		- TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 63A (Tc) 20V 34mOhm @ 50A, 20V 4V @ 15mA 130 nC @ 20 V +25V, -10V 4402 pF @ 1000 V - 446W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247-4
      S1M1000170D

      S1M1000170D

      MOSFET SILICON CARBIDE SIC 1700V

      SMC Diode Solutions

      		 290
      RFQ
      		S1M1000170D

      Datasheet

             		- TO-247-3 Tube Active N-Channel SiC (Silicon Carbide Junction Transistor) 1700 V 5.2A (Tc) 20V 1.3Ohm @ 2A, 20V 4V @ 500µA 10 nC @ 20 V +25V, -10V 160 pF @ 1000 V - 81W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247AD
      S1M1000170K

      S1M1000170K

      MOSFET SILICON CARBIDE SIC 1700V

      SMC Diode Solutions

      		 300
      RFQ
      		S1M1000170K

      Datasheet

             		- TO-247-4 Tube Active N-Channel SiC (Silicon Carbide Junction Transistor) 1700 V 5.2A (Tc) 20V 1.3Ohm @ 2A, 20V 4V @ 500µA 10 nC @ 20 V +25V, -10V 160 pF @ 1000 V - 81W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247-4
      S2M0160120D

      S2M0160120D

      MOSFET SILICON CARBIDE SIC 1200V

      SMC Diode Solutions

      		 285
      RFQ
      		S2M0160120D

      Datasheet

             		- TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 17A (Tc) 20V 196mOhm @ 10A, 20V 4V @ 2.5mA 26.5 nC @ 20 V +20V, -5V 513 pF @ 1000 V - 130W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247AD
      S2M0160120K

      S2M0160120K

      MOSFET SILICON CARBIDE SIC 1200V

      SMC Diode Solutions

      		 294
      RFQ
      		S2M0160120K

      Datasheet

             		- TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 17A (Tc) 20V 196mOhm @ 10A, 20V 4V @ 2.5mA 26.5 nC @ 20 V +20V, -5V 513 pF @ 1000 V - 130W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247-4
      Total 37 Record«Prev1234Next»
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