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      Home > All Categories  > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

      FETs, MOSFETs

      Manufacturer Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package

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      Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
      MSC045SMB120D/S

      MSC045SMB120D/S

      MOSFET SIC 1200 V 45 MOHM DIE

      Microchip Technology

      		 3,148
      RFQ
      		MSC045SMB120D/S

      Datasheet

             		- - Bulk Active - - - - - - - - - - - - - - - - -
      MSC025SMA330B4N

      MSC025SMA330B4N

      MOSFET SIC 3300V 25 MOHM TO-247-

      Microchip Technology

      		 4,377
      RFQ
      		MSC025SMA330B4N

      Datasheet

             		- TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 3300 V 104A - - - - - - - - -55°C ~ 150°C (TJ) - - Through Hole TO-247-4
      MSC025SMA120SCT/R

      MSC025SMA120SCT/R

      MOSFET SIC 1200 V 25 MOHM PSMT

      Microchip Technology

      		 2,441
      RFQ
      		MSC025SMA120SCT/R

      Datasheet

             		mSiC™ TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 1200 V 108A (Tc) 18V, 20V 31mOhm @ 40A, 20V 3V @ 3mA 232 nC @ 20 V +23V, -10V 3633 pF @ 1000 V - 524W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-268
      MSC030SMB120D/S

      MSC030SMB120D/S

      MOSFET SIC 1200 V 30 MOHM DIE

      Microchip Technology

      		 5,073
      RFQ
      		MSC030SMB120D/S

      Datasheet

             		- - Bulk Active - - - - - - - - - - - - - - - - -
      MSC400SMA330B4N

      MSC400SMA330B4N

      MOSFET SIC 3300V 400 MOHM TO-247

      Microchip Technology

      		 8,045
      RFQ
      		MSC400SMA330B4N

      Datasheet

             		- TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 3300 V 11A (Tc) 20V 520mOhm @ 5A, 20V 2.97V @ 1mA 37 nC @ 20 V +23V, -10V 579 pF @ 2.4 kV - 131W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247-4
      MSC011SMC120D/S

      MSC011SMC120D/S

      MOSFET SIC 1200 V 11 MOHM DIE

      Microchip Technology

      		 7,006
      RFQ
      		MSC011SMC120D/S

      Datasheet

             		- - Bulk Active - - - - - - - - - - - - - - - - -
      MSC011SMB120SDT/R

      MSC011SMB120SDT/R

      MOSFET SIC 1200 V 11 MOHM, 7LD T

      Microchip Technology

      		 8,897
      RFQ
      		MSC011SMB120SDT/R

      Datasheet

             		- - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
      MSC080SMB120D/S

      MSC080SMB120D/S

      MOSFET SIC 1200 V 80 MOHM DIE

      Microchip Technology

      		 5,464
      RFQ
      		MSC080SMB120D/S

      Datasheet

             		- - Tube Active - - - - - - - - - - - - - - - - -
      MSC040SMA120SDT/R

      MSC040SMA120SDT/R

      MOSFET SIC 1200 V 40 MOHM TO-263

      Microchip Technology

      		 6,632
      RFQ
      		MSC040SMA120SDT/R

      Datasheet

             		mSiC™ TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 1200 V 68A (Tc) 18V, 20V 50mOhm @ 40A, 20V 2.7V @ 2mA 137 nC @ 20 V +23V, -10V 1962 pF @ 1000 V - 338W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-268
      MSC011SMB120D/S

      MSC011SMB120D/S

      MOSFET SIC 1200 V 11 MOHM DIE

      Microchip Technology

      		 6,768
      RFQ
      		MSC011SMB120D/S

      Datasheet

             		- - Bulk Active - - - - - - - - - - - - - - - - -
      MSC060SMB120D/S

      MSC060SMB120D/S

      MOSFET SIC 1200 V 60 MOHM DIE

      Microchip Technology

      		 3,943
      RFQ
      		MSC060SMB120D/S

      Datasheet

             		- - Bulk Active - - - - - - - - - - - - - - - - -
      MSC040SMB120D/S

      MSC040SMB120D/S

      MOSFET SIC 1200 V 40 MOHM DIE

      Microchip Technology

      		 5,413
      RFQ
      		MSC040SMB120D/S

      Datasheet

             		- - Bulk Active - - - - - - - - - - - - - - - - -
      MSC025SMB120D/S

      MSC025SMB120D/S

      MOSFET SIC 1200 V 25 MOHM DIE

      Microchip Technology

      		 5,237
      RFQ
      		MSC025SMB120D/S

      Datasheet

             		- - Bulk Active - - - - - - - - - - - - - - - - -
      MSC080SMA330B4N

      MSC080SMA330B4N

      MOSFET SIC 3300V 80 MOHM TO-247-

      Microchip Technology

      		 7,947
      RFQ
      		MSC080SMA330B4N

      Datasheet

             		- TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 3300 V 41A (Tc) 20V 105mOhm @ 30A, 20V 2.97V @ 3mA 55 nC @ 20 V +23V, -10V 3462 pF @ 2.4 kV - 381W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247-4
      IGLT65R055D2

      IGLT65R055D2

      GAN TRANSISTOR 650 V G5

      Infineon Technologies Canada Inc.

      		 6,023
      RFQ
      		IGLT65R055D2

      Datasheet

             		CoolGaN™ 16-PowerSOP Module Tape & Reel (TR) Active N-Channel GaNFET (Gallium Nitride) 650 V 31A (Tc) - - 1.6V @ 2.6mA 6.6 nC @ 3 V -10V 330 pF @ 400 V - 104W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-HDSOP-16-8
      IGLT65R045D2

      IGLT65R045D2

      GAN TRANSISTOR 650 V G5

      Infineon Technologies Canada Inc.

      		 4,276
      RFQ
      		IGLT65R045D2

      Datasheet

             		CoolGaN™ 16-PowerSOP Module Tape & Reel (TR) Active N-Channel GaNFET (Gallium Nitride) 650 V 38A (Tc) - - 1.6V @ 3.3mA 8.4 nC @ 3 V -10V 420 pF @ 400 V - 125W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-HDSOP-16-8
      SCT2H12NWBTL1

      SCT2H12NWBTL1

      SICFET N-CH 1700V 4A TO268

      Rohm Semiconductor

      		 9,309
      RFQ
      		SCT2H12NWBTL1

      Datasheet

             		- - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
      SCT2750NWCTL1

      SCT2750NWCTL1

      SICFET N-CH 1700V 5.9A TO268

      Rohm Semiconductor

      		 7,718
      RFQ
      		SCT2750NWCTL1

      Datasheet

             		- - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
      C3M00160120D

      C3M00160120D

      SIC, MOSFET, 120M, 650V, TOLL, I

      Wolfspeed, Inc.

      		 8,663
      RFQ
      		C3M00160120D

      Datasheet

             		- - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
      C3M0900170D

      C3M0900170D

      SICFET N-CH 1700V 4.9A TO247-3

      Wolfspeed, Inc.

      		 2,164
      RFQ
      		C3M0900170D

      Datasheet

             		- TO-247-3 Tube Active N-Channel SiC (Silicon Carbide Junction Transistor) 1700 V 6.3A - - - - - - - - 175°C (TJ) - - Through Hole TO-247-3
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